Simulation Study on Atomic Arrangements during Molecular Beam Epitaxy.

Atomic processes in molecular beam epitaxy on strained InAs(137): A density-functional theory study

P. Kratzer1,2,* and T. Hammerschmidt2,3 1Fakultät für Physik, and Center for Nanointegration (CeNIDE), Universität Duisburg-Essen, Lotharstrasse 1, D-47048 Duisburg, Germany 2Fritz-Haber-Institut der MPG, Faradayweg 4-6, D-14195 Berlin, Germany 3Interdisciplinary Centre for Advanced Materials Simulation (ICAMS), Ruhr-Universität Bochum, Stiepeler Strasse 129, D-44801 Bochum, Germany Received 28...

Segregation and trapping of erbium during silicon molecular beam epitaxy

Erbium surface segregation is observed during growth of Er-doped Si by molecular beam epitaxy on Si~100! at 600 °C. Once a critical Er surface areal density of 2310 Er/cm is reached, enhanced Er trapping is observed, possibly due to the formation of silicide precipitates. Er segregation on Si~100! is fully avoided when growth is performed in an oxygen background pressure of ; 10 mbar, due to th...

Effects of hydrogen during molecular beam epitaxy of GaN

Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy

The reconstruction and surface morphology of gallium nitride (0001) and (000 ) surfaces are studied using scanning probe microscopy and reflection high-energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to co-deposition of indium or magnesium during growth are discussed.

Basics of Molecular Beam Epitaxy (MBE)

A brief introduction to the MBE technique is presented with main attention to the elemental source MBE. A discussion on the effusion cell as beam source is shortly given starting from ideal cases to real cells homogeneity problems. A short review regarding the thermodynamic approach to the MBE is pointed out. Focusing on the possibility that, despite the fact that MBE processes occur under stro...